Title :
Si-analog IC´s for 20 Gb/s optical receiver
Author :
Soda, Masaaki ; Tezuka, Hiroshi ; Sato, Fumihiko ; Hashimoto, Takasuke ; Nakamura, Satoshi ; Tatsumi, Toru ; Suzaki, Tetsuyuki ; Tashiro, Tsutomu
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Kawasaki, Japan
fDate :
12/1/1994 12:00:00 AM
Abstract :
Two Si-Analog IC´s, a preamplifier IC and a decision IC, for a 20 Gb/s optical receiver have been developed using SiGe-base bipolar transistors having a 60 GHz maximum cutoff frequency. The preamplifier employing a dual feedback loop increases the -3 dB bandwidth up to 19 GHz. A decision IC, composed of a gain controllable amplifier with a bias stabilization circuit and D-F/F, operated at up to 20 Gb/s with a 200-mVp-p input sensitivity
Keywords :
Ge-Si alloys; bipolar analogue integrated circuits; decision circuits; feedback amplifiers; optical fibre communication; optical receivers; preamplifiers; semiconductor materials; 19 GHz; 20 Gbit/s; 3 dB bandwidth; 60 GHz; Si-analog ICs; SiGe; SiGe-base bipolar transistors; bias stabilization circuit; decision IC; dual feedback loop; gain controllable amplifier; input sensitivity; maximum cutoff frequency; optical receiver; preamplifier IC; Bipolar integrated circuits; Bipolar transistors; High speed optical techniques; Optical amplifiers; Optical feedback; Optical receivers; Optical sensors; Photonic integrated circuits; Preamplifiers; Stimulated emission;
Journal_Title :
Solid-State Circuits, IEEE Journal of
