Title :
Breakdown walkout and its reduction in high-voltage pLDMOS transistors on thin epitaxial layer
Author :
Van Calster, A. ; Witters, J.
fDate :
7/30/1992 12:00:00 AM
Abstract :
Breakdown walkout in high-voltage pLDMOS transistors on a thin epitaxial layer is observed and investigated by using ion implantation to vary the surface electric field in the drift region. Results show that the walkout is closely related to the surface field and can be reduced by determining the correct extent of ion implantation.
Keywords :
electric breakdown of solids; electric fields; insulated gate field effect transistors; ion implantation; power transistors; HV type; breakdown walkout; drift region; high-voltage; ion implantation; lateral double-diffused device; p-channel device; pLDMOS transistors; surface electric field; thin epitaxial layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920976
