DocumentCode :
1214927
Title :
30 Gb/s Over 100-m MMFs Using 1.1- 
m Range VCSELs and Photodiodes
Author :
Fukatsu, Kimiyoshi ; Shiba, Kazuhiro ; Suzuki, Yasuyuki ; Suzuki, Naofumi ; Anan, Takayoshi ; Hatakeyama, Hiroshi ; Yashiki, Kenichiro ; Tsuji, Masayoshi
Author_Institution :
Nano Electron. Res. Labs., NEC Corp., Shiga
Volume :
20
Issue :
11
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
909
Lastpage :
911
Abstract :
We developed 1.1-mum-range vertical-cavity surface-emitting lasers based on InGaAs-GaAs quantum wells, back-illuminated InGaAs photodiodes, and transimpedance amplifiers (InP heterojunction bipolar transistor) for high-speed optical interconnection. Clear eye opening operation and error-free transmission at 30 Gb/s over 100-m multimode fibers (GI32) were successfully achieved for the first time.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high-speed optical techniques; indium compounds; photodiodes; quantum wells; surface emitting lasers; InGaAs-GaAs; InP; VCSEL; bit rate 30 Gbit/s; clear eye opening operation; distance 100 m; error-free transmission; heterojunction bipolar transistor; high-speed optical interconnection; multimode fibers; photodiodes; quantum wells; transimpedance amplifiers; vertical-cavity surface-emitting lasers; wavelength 1.1 mum; Fiber lasers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Photodiodes; Quantum well lasers; Semiconductor optical amplifiers; Surface emitting lasers; Vertical cavity surface emitting lasers; Heterojunction bipolar transistors (HBTs); optical interconnections; photodiodes (PDs); semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.922357
Filename :
4515990
Link To Document :
