Title :
Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method
Author :
Lee, Ching-Ting ; Lee, Hsin-Ying
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
To improve the performance of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we directly grew an oxide passivation layer in regions between the interdigitated electrodes of MSM-PDs, using the photoelectrochemical oxidation method. The measured dark current of passivated MSM-PDs was comparatively lower than that of unpassivated devices for all of the applied voltages. The breakdown voltages of MSM-PDs with and without oxide passivation layer were 52.5 and 42.5 V, respectively. The benefits of incorporating the oxide passivation layer will possibly lead to a sizable reduction of surface states that in return will help to decrease the probability of surface breakdown. Also, it should improve the rejection ratio of MSM-PDs.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; metal-semiconductor-metal structures; oxidation; passivation; photodetectors; photoelectrochemistry; 42.5 V; 52.5 V; GaAs; GaAs MSM-PD; breakdown voltage; dark current; interdigitated electrodes; metal-semiconductor-metal photodetectors; photoelectrochemical oxidation; rejection ratio; surface breakdown; surface passivation; Current measurement; Dark current; Electric breakdown; Electrodes; Gallium arsenide; Lead compounds; Oxidation; Passivation; Photodetectors; Voltage; GaAs; InAlGaP; metal–semiconductor–metal photodetectors (MSM-PDs); oxide passivation layer; photoelectrochemical (PEC) oxidation method;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.839447