DocumentCode
1215320
Title
1 W diffraction-limited-beam operation of resonant-optical-waveguide diode laser arrays at 0.98 mu m
Author
Zmudzinski, C. ; Mawst, L.J. ; Botez, D. ; Tu, Chun-Da ; Wang, Christine A.
Author_Institution
TRW Space & Technol. Group, Redondo Beach, CA, USA
Volume
28
Issue
16
fYear
1992
fDate
7/30/1992 12:00:00 AM
Firstpage
1543
Lastpage
1544
Abstract
Resonant arrays of antiguided diode lasers operating at 0.98 mu m are reported for the first time. The devices use a strained-layer quantum-well InGaAs/AlGaAs structure. A diffraction-limited beam pattern is observed up to 1 W under pulsed operation and 0.25 W under CW operation. To the best of the authors´ knowledge, this is the highest power in a diffraction-limited beam from diode laser arrays at 0.98 mu m.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; optical waveguides; semiconductor laser arrays; 0.25 W; 0.98 micron; 1 W; CW operation; InGaAs-AlGaAs; antiguided diode lasers; diffraction-limited beam pattern; pulsed operation; resonant-optical-waveguide diode laser arrays; strained-layer quantum-well;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920980
Filename
153236
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