Title :
Ar ion implant damage gettering of generation impurities in silicon employing voltage ramping and nitrogen backscattering
Author :
Golja, B. ; Nassibian, A.G.
fDate :
9/1/1979 12:00:00 AM
Abstract :
The effects of Ar-ion implant gettering has been investigated using the linear voltage ramp applied to m.o.s. capacitors. A comparison is made with control (not implanted) samples and N+-ion Rutherford backscattering is used to examine the precipitation of generation impurities by the damaged layers. The gettering anneals were carried out over the temperature range 950¿¿C¿¿1100¿¿C and for various times from 15 min to 120 min. It is shown that long gettering anneal times and high anneal temperatures both have a detrimental effect on minority-carrier lifetime.
Keywords :
annealing; carrier lifetime; elemental semiconductors; ion implantation; metal-insulator-semiconductor structures; minority carriers; particle backscattering; semiconductor doping; silicon; Ar; MOS capacitors; Rutherford backscattering; Si; annealing; elemental semiconductors; gettering anneals; implant damage gettering; impurity generation; ion implantation; linear voltage ramp; minority carrier lifetime;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1979.0027
