DocumentCode
1215351
Title
Ar ion implant damage gettering of generation impurities in silicon employing voltage ramping and nitrogen backscattering
Author
Golja, B. ; Nassibian, A.G.
Volume
3
Issue
5
fYear
1979
fDate
9/1/1979 12:00:00 AM
Firstpage
127
Lastpage
132
Abstract
The effects of Ar-ion implant gettering has been investigated using the linear voltage ramp applied to m.o.s. capacitors. A comparison is made with control (not implanted) samples and N+-ion Rutherford backscattering is used to examine the precipitation of generation impurities by the damaged layers. The gettering anneals were carried out over the temperature range 950¿¿C¿¿1100¿¿C and for various times from 15 min to 120 min. It is shown that long gettering anneal times and high anneal temperatures both have a detrimental effect on minority-carrier lifetime.
Keywords
annealing; carrier lifetime; elemental semiconductors; ion implantation; metal-insulator-semiconductor structures; minority carriers; particle backscattering; semiconductor doping; silicon; Ar; MOS capacitors; Rutherford backscattering; Si; annealing; elemental semiconductors; gettering anneals; implant damage gettering; impurity generation; ion implantation; linear voltage ramp; minority carrier lifetime;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1979.0027
Filename
4807779
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