• DocumentCode
    1215376
  • Title

    Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo method

  • Author

    Moglestue, C.

  • Author_Institution
    University of Reading, Computer Science Department, Reading, UK
  • Volume
    3
  • Issue
    5
  • fYear
    1979
  • fDate
    9/1/1979 12:00:00 AM
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.
  • Keywords
    Monte Carlo methods; digital simulation; electronic engineering computing; field effect transistors; GaAs; Monte Carlo method; computer simulation; current voltage characteristics; dual gate FET;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1979.0028
  • Filename
    4807780
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1215376