DocumentCode
1215384
Title
Calculation of thermal noise in j.f.e.t.s
Author
Schr¿¿der, D. ; Weinhausen, G.
Author_Institution
Technische Universit¿¿t Braunschweig, Institut f¿¿r Elektronik, Braunschweig, West Germany
Volume
3
Issue
5
fYear
1979
fDate
9/1/1979 12:00:00 AM
Firstpage
137
Lastpage
141
Abstract
At frequencies above the range at which low-frequency-generation noise is dominant, thermal noise in the channel is the main noise source of a junction field-effect transistor. Starting from the well known current and continuity equations, the drain- and gate-noise spectra and their correlation coefficient are calculated by means of a series expansion, in a second-order approximation. The results are compared with calculations and measurements of other authors. There is good agreement with experiments, but differences exist with some of the earlier computations in the literature.
Keywords
electron device noise; junction gate field effect transistors; thermal noise; JFET; continuity equations; correlation coefficient; current equation; drain noise spectra; gate noise spectra; second order approximation series expansion; thermal noise;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1979.0029
Filename
4807781
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