• DocumentCode
    1215384
  • Title

    Calculation of thermal noise in j.f.e.t.s

  • Author

    Schr¿¿der, D. ; Weinhausen, G.

  • Author_Institution
    Technische Universit¿¿t Braunschweig, Institut f¿¿r Elektronik, Braunschweig, West Germany
  • Volume
    3
  • Issue
    5
  • fYear
    1979
  • fDate
    9/1/1979 12:00:00 AM
  • Firstpage
    137
  • Lastpage
    141
  • Abstract
    At frequencies above the range at which low-frequency-generation noise is dominant, thermal noise in the channel is the main noise source of a junction field-effect transistor. Starting from the well known current and continuity equations, the drain- and gate-noise spectra and their correlation coefficient are calculated by means of a series expansion, in a second-order approximation. The results are compared with calculations and measurements of other authors. There is good agreement with experiments, but differences exist with some of the earlier computations in the literature.
  • Keywords
    electron device noise; junction gate field effect transistors; thermal noise; JFET; continuity equations; correlation coefficient; current equation; drain noise spectra; gate noise spectra; second order approximation series expansion; thermal noise;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1979.0029
  • Filename
    4807781