DocumentCode
1215390
Title
Evidence for two types of radiation-induced trapped positive charge
Author
Freitag, R.K. ; Brown, D.B. ; Dozier, C.M.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
41
Issue
6
fYear
1994
Firstpage
1828
Lastpage
1834
Abstract
New experimental evidence is presented that supports a model that assumes two distinguishable types of positive oxide charge following x-irradiation. Two new experiments have been performed designed to separate the annealing properties of the two types of trapped positive charge. It is found that one type of trapped positive charge can be permanently removed at room temperature using substrate hot electron injection. The second type of trapped positive charge is found to be stable at temperatures up to 160/spl deg/C.<>
Keywords
MIS structures; X-ray effects; annealing; hot carriers; silicon compounds; 160 C; SiO/sub 2/; X-irradiation; annealing; positive oxide charge; radiation-induced trapped positive charge; substrate hot electron injection; Annealing; Charge carrier processes; Electron traps; Laboratories; Silicon; Stress; Substrate hot electron injection; Temperature; Terminology; Tunneling;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.340514
Filename
340514
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