• DocumentCode
    1215395
  • Title

    Hot-electron camel transistor

  • Author

    Shannon, J.M.

  • Author_Institution
    Philips, Research Laboratories, Redhill, UK
  • Volume
    3
  • Issue
    5
  • fYear
    1979
  • fDate
    9/1/1979 12:00:00 AM
  • Firstpage
    142
  • Lastpage
    144
  • Abstract
    A transistor is proposed in which hot electrons cross a degenerate semiconductor base region and overcome a potential barrier in the bulk of the semiconductor which forms a collector. Structures in silicon corresponding to this concept have been fabricated using low-energy ion implantation and have given transistor action consistent with hot-electron transport.
  • Keywords
    bipolar transistors; hot carriers; Si; camel transistor; degenerate semiconductor base region; hot electron transport; ion implantation; monolithic hot electron transistor; potential barrier;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1979.0030
  • Filename
    4807782
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1215395