Title :
Hot-electron camel transistor
Author_Institution :
Philips, Research Laboratories, Redhill, UK
fDate :
9/1/1979 12:00:00 AM
Abstract :
A transistor is proposed in which hot electrons cross a degenerate semiconductor base region and overcome a potential barrier in the bulk of the semiconductor which forms a collector. Structures in silicon corresponding to this concept have been fabricated using low-energy ion implantation and have given transistor action consistent with hot-electron transport.
Keywords :
bipolar transistors; hot carriers; Si; camel transistor; degenerate semiconductor base region; hot electron transport; ion implantation; monolithic hot electron transistor; potential barrier;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1979.0030
