Radiation effects in oxynitrides grown in N/sub 2/O

Author

Saks, N.S. ; Simons, M. ; Fleetwood, D.M. ; Yount, J.T. ; Lenahan, P.M. ; Klein, R.B.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

41

Issue

6

fYear

1994

Firstpage

1854

Lastpage

1863

Abstract

Oxynitrides have been grown by oxidation in N/sub 2/O in a standard thermal oxidation furnace. Two N/sub 2/O processes have been studied: oxidation in N/sub 2/O only, and two-step oxidation with initial oxidation in O/sub 2/ followed by oxidation/nitridation in N/sub 2/O. Results are presented for radiation damage at 80 and 295 K, hole trapping, interface trap creation, electron spin resonance, and hole de-trapping using thermally-stimulated current analysis. N/sub 2/O oxynitrides do not appear to have the well-known drawbacks of NH/sub 3/-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N/sub 2/O oxynitrides, with the degree of improvement depending on the fabrication process.<>

Keywords

X-ray effects; gamma-ray effects; hole traps; insulating thin films; interface states; nitridation; oxidation; paramagnetic resonance; silicon compounds; thermally stimulated currents; 295 K; 80 K; N/sub 2/O; SiON; electron spin resonance; fabrication; hole de-trapping; hole trapping; interface trap creation; nitridation; oxynitrides; radiation damage; thermal oxidation furnace; thermally-stimulated current analysis; two-step oxidation; Electron traps; Fabrication; Furnaces; Hydrogen; Laboratories; Oxidation; Paramagnetic resonance; Radiation effects; Rapid thermal processing; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340517

Filename

340517