Growth and characterisation of GaInAsP/InP double heterostructure material for stripe-geometry lasers emitting near 1.3μm

This paper describes the growth and characterisation of double heterostructure multilayers of GalnAsP/InP for the fabrication of laser diodes emitting near 1-3μm. A single-phase growth technique has been employed enabling good uniformity, lattice match and wavelength control. The contact resistance profiling technique has been extensively used in the establishment of a growth procedure which effectively suppresses the diffusion of zinc from the heavily doped capping layer. Lasers fabricated from the material have shown good reproducibility, with pulsed room-temperature thresholds as low as 140 mA for 10 ¿m wide oxide stripe devices.