Preparation and characterisation of GaInAsP/InP double-heterostructure wafers and lasers for the 1.3μm wavelength range

Author

Göbel, E. ; Gottsmann, H. ; Herzog, H.J. ; Marschall, P. ; Schlosser, E. ; Schurr, E.A.

Author_Institution

AEG-Telefunken, Forschungsinstitut, Ulm, West Germany

Volume

3

Issue

6

fYear

1979

fDate

11/1/1979 12:00:00 AM

Firstpage

186

Lastpage

188

Abstract

GalnAsP/InP double-heterostructure lasers were grown by liquid-phase epitaxy on (100) InP substrates for the wavelength region around 1.3 μm. The preparation and the properties of the wafers are described in detail. The characterisation includes the determination of the band-gap energy, the lattice mismatch of the GalnAsP active layer to InP as a function of the melt composition, and the measurement of the optical-gain spectra. Oxide-stripe geometry lasers, prepared from the wafers, lase at around 1.3 Â¿m with pulsed thresholds between 300 and 400 mA. Some samples have been tested in c.w. operation at room temperature for more than 1400 hours. During the first 1000 hours a threshold increase of typically 2% has been observed.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.3 mu m wavelength; GaInAsP/InP DH lasers; LPE; band gap energy; lattice mismatch; optical grain spectra measurement; oxide stripe geometry lasers;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Journal on

Publisher

iet

ISSN

0308-6968

Type

jour

DOI

10.1049/ij-ssed:19790037

Filename

4807790