DocumentCode
1215542
Title
Co/sup 60/ gamma ray and electron displacement damage studies of semiconductors
Author
Xapsos, M.A. ; Summers, G.P. ; Blatchley, C.C. ; Colerico, C.W. ; Burke, E.A. ; Messenger, S.R. ; Shapiro, P.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
41
Issue
6
fYear
1994
Firstpage
1945
Lastpage
1949
Abstract
A general method for relating Co/sup 60/ gamma ray and monoenergetic electron beam displacement damage is presented. The approach is based on the concept of effective "displacement damage dose", which is analogous to ideas used to study ionizing radiation effects. The response to electron damage of p-type gallium arsenide and indium phosphide solar cells, as previously reported for p-type silicon solar cells, is proportional to the square of the nonionizing energy loss.<>
Keywords
III-V semiconductors; electron beam effects; gallium arsenide; gamma-ray effects; indium compounds; solar cells; Co/sup 60/ gamma ray displacement damage; GaAs; InP; displacement damage dose; electron displacement damage; ionizing radiation effects; nonionizing energy loss; p-type gallium arsenide; p-type indium phosphide; semiconductors; solar cells; Electron beams; Energy exchange; Energy loss; Gallium arsenide; Gamma ray effects; Gamma rays; Indium phosphide; Ionization; Photovoltaic cells; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.340528
Filename
340528
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