Title :
A 4.15 kV 9.07-mΩ·cm2 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature
Author :
Nakamura, Tomonori ; Miyanagi, Toshiyuki ; Kamata, Isaho ; Jikimoto, Tamotsu ; Tsuchida, Hidekazu
Author_Institution :
Central Res. Inst. of Electr. Power Ind., Kanagawa, Japan
Abstract :
In this letter, we report the fabrication of high-voltage and low-loss 4H-SiC Schottky-barrier diodes (SBDs) with a performance close to the theoretical limit using a Mo contact annealed at high-temperature. High-temperature annealing for the Mo contact was found to be effective in controlling the Schottky-barrier height at 1.2-1.3 eV without degradation of n-factor and reverse characteristics. We successfully obtained a 1-mm2 Mo-4H-SiC SBD with a breakdown voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mΩ·cm2, achieving a best Vb2/Ron value of 1898 MW/cm2. We also obtained a 9-mm2 Mo-4H-SiC SBD with Vb of 4.40 kV and Ron of 12.20 mΩ·cm2.
Keywords :
Schottky barriers; Schottky diodes; annealing; electrical contacts; high-temperature electronics; power semiconductor diodes; semiconductor device breakdown; 1.2 to 1.3 eV; 4.15 kV; 4H-SiC Schottky-barrier diode; Mo; Mo contact; Schottky-barrier height; SiC; breakdown voltage; high-temperature annealing; n-factor degeneration; reverse characteristics; Annealing; Bipolar transistors; Current density; Degradation; Fabrication; Helium; Schottky barriers; Schottky diodes; Temperature dependence; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.841473
