Title :
Design considerations for 1.3 μm emission of GaInNAs/GaAs strained quantum-well lasers
Author :
Alexandropoulos, D. ; Adam, M.J.
Author_Institution :
Electron. Syst. Eng. Dept., Univ. of Essex, Colchester, UK
fDate :
4/18/2003 12:00:00 AM
Abstract :
The authors explore theoretically different indium and nitrogen compositions and well widths for 1.3 μm emission of GaInNAs strained quantum well lasers. The nitrogen-induced conduction band non-parabolicity is accounted for through the band anti-crossing model, and valence-band mixing effects and strain are treated exactly. Basic design rules are outlined not only on the basis of the emission wavelength but also in terms of optimal device operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser theory; laser transitions; optical design techniques; optical transmitters; quantum well lasers; semiconductor device models; valence bands; 1.3 micron; GaInNAs-GaAs; GaInNAs/GaAs strained quantum-well lasers; band anti-crossing model; emission wavelength; indium compositions; nitrogen compositions; nitrogen-induced conduction band nonparabolicity; optimal device operation; valence-band mixing effects; well widths;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030385
