A novel approach for measuring the radial distribution of charge in a heavy-ion track

Author

Howard, J.W., Jr. ; Block, R.C. ; Dussault, H. ; Stapor, W.J. ; McDonald, P.T. ; Knudson, A.R. ; Pinto, M.R.

Author_Institution

Dept. of Nucl. Eng. & Eng. Phys., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

41

Issue

6

fYear

1994

Firstpage

2077

Lastpage

2084

Abstract

We describe the design and uses of possible semiconductor test structures for measuring the initial radial distribution of charge and subsequent charge transport in a high energy, heavy-ion track. Numerical simulations show how the test structure can resolve different radial distributions of charge within an ion track. The test structure simulations also show the importance of accurately representing ion track structure in single event effects simulations.<>

Keywords

Schottky barriers; Schottky diodes; digital simulation; ion beam effects; semiconductor device models; semiconductor device testing; Schottky barrier rings; charge transport; heavy-ion track; ion track structure; radial charge distribution; semiconductor test structures; single event effects simulations; test structure simulations; Charge measurement; Current measurement; Discrete event simulation; Energy resolution; Laboratories; Ohmic contacts; Physics; Schottky barriers; Silicon; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340545

Filename

340545