GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors

Author

Chiou, Y.Z. ; Su, Y.K. ; Chang, S.J. ; Chen, C.H.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taiwan, Taiwan

Volume

150

Issue

2

fYear

2003

fDate

4/18/2003 12:00:00 AM

Firstpage

115

Lastpage

118

Abstract

A detailed study of Schottky barrier contact on n-type GaN and the characterisation of GaN metal-semiconductor-metal photodetectors is reported. Au, Pd, Ni, Pt and Ti were used as Schottky dots and Al was used as an ohmic contact. The barrier, ideality factors and effective Richardson constant were obtained. The large index of interfacial behaviour, S, reveals that the surface pinning of n-GaN is much less than that of GaAs, GaP and Si. Interdigital metal-semiconductor-metal (MSM) photodetectors were fabricated by depositing different metal contacts on n-GaN, p-GaN and n-In_0.2Ga_0.8N. The characteristics of the fabricated Schottky MSM photodetectors were studied in detail.

Keywords

III-V semiconductors; Schottky barriers; electron affinity; gallium compounds; indium compounds; metal-semiconductor-metal structures; photodetectors; Au; GaN; GaN metal-semiconductor interface; GaN metal-semiconductor-metal photodetectors; In_0.2Ga_0.8N; InGaN; InGaN metal-semiconductor-metal photodetectors; Ni; Pd; Pt; Schottky MSM photodetectors; Schottky barrier contact; Schottky dots; Ti; effective Richardson constant; ideality factors; interdigital; interfacial behaviour; metal contacts; n-type; photodetectors; surface pinning;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20030371

Filename

1203097