DocumentCode
121575
Title
Recombination via nano-precipitates … a new mechanism for efficiency loss in solar silicon?
Author
Peaker, A.R. ; Hamilton, Blaine ; Leonard, S. ; Markevich, V.P. ; Youssef, K. ; Rozgonyi, G.
Author_Institution
Photon Sci. Inst., Univ. of Manchester, Manchester, UK
fYear
2014
fDate
8-13 June 2014
Abstract
Fast diffusing metals in silicon can form large precipitates. Although such precipitates can be damaging because of junction leakage they are not powerful recombination centers. In contrast we have investigated the precipitation of slow diffusing metals and found that they can produce nano-precipitates with dimensions of 2 to 10 nm. These have strong recombination activity. In this paper we focus on molybdenum nano-precipitates and present an analysis of recombination behavior derived from deep level transient spectroscopy. The chemical species of the nano-precipitates has been determined using transmission electron microscopy.
Keywords
elemental semiconductors; molybdenum; precipitation; silicon; solar cells; transmission electron microscopy; deep level transient spectroscopy; efficiency loss; molybdenum nanoprecipitates; nanoprecipitates; recombination behavior analysis; solar silicon; transmission electron microscopy; Annealing; Boron; Chemicals; Epitaxial growth; Lattices; Silicon; DLTS; TEM; nano-precipitates; photovoltaic cells; recombination lifetime; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/PVSC.2014.6925076
Filename
6925076
Link To Document