Quantitative residual stress imaging of multicrystalline, quasi-mono, and thin kerfless silicon wafers by infrared birefringence and sectioning

Author

Castellanos, S. ; Buonassisi, Tonio

Author_Institution

Massachusetts Inst. of Technol., Cambridge, MA, USA

fYear

2014

fDate

8-13 June 2014

Abstract

One of the parameters with highest impact on photovoltaic module cost is manufacturing yield during solar cell production and handling. This work presents a method to quantify residual stress in silicon wafers, through a combination of infrared birefringence imaging (IBI) and sectioning. We spatially resolve and decouple in-plane residual stress components in silicon wafers produced by four different growth methods.

Keywords

elemental semiconductors; infrared imaging; integrated circuit manufacture; internal stresses; silicon; solar cells; IBI; Si; growth methods; in-plane residual stress components; infrared birefringence; infrared sectioning; manufacturing yield; multicrystalline silicon wafers; photovoltaic module cost; quantitative residual stress imaging; quasimono kerfless silicon wafers; solar cell production; thin kerfless silicon wafers; Imaging; Manufacturing; Residual stresses; Silicon; Spatial resolution; birefringence; imaging; infrared; kerfless silicon; multicrystalline; quasi-mono; residual stress; ribbon; sectioning; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925077

Filename

6925077