PIN diode and neutron spectrum measurements at the Army Pulse Radiation Facility

Author

Oliver, M.A.

Author_Institution

Aberdeen Proving Ground, MD, USA

Volume

41

Issue

6

fYear

1994

Firstpage

2132

Lastpage

2138

Abstract

Neutron spectrum measurements using the foil activation technique have been made in two widely varying environments. One is an extremely high neutron-to-gamma field and the other extremely low. These measurements were used to characterize the fields and to evaluate the use of the DN-156 PIN diode for measuring 1 MeV equivalent neutron fluence in silicon (/spl Phi/1 MeV(Si)). The agreement between the /spl Phi/1 MeV(Si) as measured with diodes and as determined by the spectral measurements was within /spl plusmn/5%. A proton recoil neutron spectrum measurement was also made in the low gamma environment.<>

Keywords

military equipment; neutron detection; neutron spectroscopy; p-i-n diodes; radiation hardening (electronics); semiconductor device testing; silicon radiation detectors; 1 MeV; Army Pulse Radiation Facility; DN-156 PIN diode; PIN diode; ROSPEC measurements; SANDII analysis; Si; device under test; foil activation technique; foil counting; low gamma environment; neutron fluence measurement; neutron spectrum measurements; neutron-to-gamma field environments; proton recoil neutron spectrum measurement; radiation hardness testing; Bismuth; Detectors; Diodes; Electronic equipment testing; Inductors; Materials testing; Monitoring; Neutrons; Polyethylene; Pulse measurements;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340553

Filename

340553