DocumentCode
1215867
Title
Evidence of the ion´s impact position effect on SEB in N-channel power MOSFETs
Author
Dachs, Charles ; Roubaud, Franck ; Palau, Jean-Marie ; Bruguier, Guy ; Gasiot, Jean ; Tastet, Pierre
Author_Institution
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Volume
41
Issue
6
fYear
1994
Firstpage
2167
Lastpage
2171
Abstract
Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive and nondestructive events are investigated through current duration observations. The effect of the ion´s impact position is experimentally pointed out. Finally, further investigation with 2D MEDICI simulations show that the different regions of the MOSFET cell indeed exhibit different sensitivity with respect to burnout triggering.<>
Keywords
ion beam effects; power MOSFET; simulation; 2D MEDICI simulations; N-channel power MOSFETs; current duration observations; destructive events; impact position effect; ion impact; nondestructive events; single event burnout triggering; Circuit testing; Counting circuits; Delay effects; MOSFETs; Power supplies; Resistors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.340558
Filename
340558
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