Title :
Evidence of the ion´s impact position effect on SEB in N-channel power MOSFETs
Author :
Dachs, Charles ; Roubaud, Franck ; Palau, Jean-Marie ; Bruguier, Guy ; Gasiot, Jean ; Tastet, Pierre
Author_Institution :
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive and nondestructive events are investigated through current duration observations. The effect of the ion´s impact position is experimentally pointed out. Finally, further investigation with 2D MEDICI simulations show that the different regions of the MOSFET cell indeed exhibit different sensitivity with respect to burnout triggering.<>
Keywords :
ion beam effects; power MOSFET; simulation; 2D MEDICI simulations; N-channel power MOSFETs; current duration observations; destructive events; impact position effect; ion impact; nondestructive events; single event burnout triggering; Circuit testing; Counting circuits; Delay effects; MOSFETs; Power supplies; Resistors;
Journal_Title :
Nuclear Science, IEEE Transactions on
