DocumentCode :
1215877
Title :
Ion-induced sustained high current condition in a bipolar device
Author :
Koga, R. ; Ferro, R.J. ; Mabry, D.J. ; Pinkerton, S.D. ; Romeo, D.E. ; Scarpulla, J.R. ; Tsubota, T.K. ; Shoga, M.
Author_Institution :
Aerosp. Corp., Los Angeles, CA, USA
Volume :
41
Issue :
6
fYear :
1994
Firstpage :
2172
Lastpage :
2178
Abstract :
Observation of an ion-induced sustained high current condition ("high current anomaly") in a bipolar device, that is similar but not identical to latchup, is reported. Both high current anomaly and single event upset test results are presented for the AD9048 test device. Photon emission microscopy was used to locate the site of the high current anomaly. A model of the triggering mechanism based on the results so obtained is described.<>
Keywords :
bipolar integrated circuits; integrated circuit modelling; ion beam effects; AD9048 test device; ADC; SEU test; bipolar IC; high current anomaly; ion-induced sustained high current condition; model; photon emission microscopy; single event upset test; triggering mechanism; Analog-digital conversion; Circuit testing; Clocks; Computer errors; Cyclotrons; Ion beams; Laboratories; Microscopy; Single event upset; Thyristor circuits;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.340559
Filename :
340559
Link To Document :
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