DocumentCode
121592
Title
Liquid junction quantum dot solar cells based on ZnO nanowires arrays
Author
Janfeshan, Bita ; Sadeghimakki, Bahareh ; Jahed, Navid M. S. ; Sivoththaman, Siva
Author_Institution
ECE Dept., Univ. of Waterloo, Waterloo, ON, Canada
fYear
2014
fDate
8-13 June 2014
Firstpage
1051
Lastpage
1055
Abstract
Liquid junction solar cells sensitized with quantum dots are promising structures as low cost and high efficiency photovoltaic devices. However, the reported short circuit current and open circuit voltage is lower than the theoretical values. The performance of these cells can be improved by the use of defect-free photoelectrodes and absorbing materials. In this work, hydrothermally grown zinc oxide (ZnO) nanowires (NWs), CdSe/ZnS quantum dots (QDs), a polysulfide solution and a copper film were used as the photoelectrode, light absorber, hole scavenger, and counter electrode respectively to form a NW-based QD sensitized solar cell. The structural characteristics of the grown NWs and QD sensitized NW architectures were studied. Current-voltage (J-V) characteristic of the fabricated device was also investigated. Photoluminescence (PLLiquid junction solar cells sensitized with quantum dots are promising structures as low cost and high efficiency photovoltaic devices. However, the reported short circuit current and open circuit voltage is lower than the theoretical values. The performance of these cells can be improved by the use of defect-free photoelectrodes and absorbing materials. In this work, hydrothermally grown zinc oxide (ZnO) nanowires (NWs), CdSe/ZnS quantum dots (QDs), a polysulfide solution and a cupper film were used as the photoelectrode, light absorber, hole scavenger, and counter electrode respectively to form a NW-based QD sensitized solar cell. The structural characteristics of the grown NWs and QD sensitized NW architectures were studied. Current-voltage (J-V) characteristic of the fabricated device was also investigated. Photoluminescence (PL) study on NW/QD and QD/electrolyte architectures provided evidence on carrier transfer from the light absorbing centers to the electron and hole conducting media.) study on NW/QD and QD/electrolyte architectures provided evidence on carrier transfer from the light absorbing centers to the electron and hole co- ducting media.
Keywords
II-VI semiconductors; cadmium compounds; crystal growth from solution; nanowires; photoluminescence; semiconductor quantum dots; solar cells; zinc compounds; CdSe-ZnS; Cu; ZnO; current-voltage characteristic; electron conducting media; hole conducting media; hydrothermally grown nanowire; liquid junction quantum dot solar cells; nanowires array; open circuit voltage; photoluminescence; photovoltaic device; polysulfide solution; quantum dot-electrolyte architectures; short circuit current; Charge carrier processes; Glass; Performance evaluation; Photonic band gap; Quantum dots; Surface morphology; Zinc oxide; amorphous materials; charge carrier lifetime; photoluminescence; photovoltaic cells; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/PVSC.2014.6925094
Filename
6925094
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