Single event burnout of power MOSFETs caused by nuclear reactions with heavy ions

Author

Kuboyama, S. ; Matsuda, S. ; Kanno, T. ; Hirose, T.

Author_Institution

Tsukuba Space Centre, Nat. Space Dev. Agency of Japan, Ibaraki, Japan

Volume

41

Issue

6

fYear

1994

Firstpage

2210

Lastpage

2215

Abstract

Single event burnout (SEB) phenomenon of power MOSFETs caused by nuclear reactions with incident heavy ions has been probed experimentally. 520 MeV Kr and 3536 MeV Xe ions having the same LET were used as incident ions for the experiment. The observed SEB threshold voltage was quite different for both ions. Detailed analysis revealed that the Xe ions can produce excess charge as a result of nuclear reactions with Si atoms. The result suggests that usual SEB immunity test as a function of LET is not adequate for high voltage devices that have much larger sensitive volume.<>

Keywords

ion beam effects; power MOSFET; 3536 MeV; 520 MeV; EPICS spectra; HV devices; Kr; SEB immunity test; SEB threshold voltage; Si; Si atoms; Xe; Xe ion; heavy ions; high voltage devices; linear energy transfer; nuclear reactions; power MOSFET; single event burnout; Charge measurement; Current measurement; Cyclotrons; Energy measurement; Immunity testing; MOSFETs; Nuclear electronics; Pollution measurement; Pulse measurements; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340564

Filename

340564