Title :
MOCVD-Grown InGaN nanowires for photovoltaic applications
Author :
Kuo, H.C. ; Oh, T.S. ; Gawn Ho Jung ; Hendrix, Mark ; Kim, Sun Ja ; Shtein, Max ; Pan, Xing ; Ku, P.-C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Dislocation-free, vertically-aligned, and strain-relaxed InGaN nanowires were realized using metal-organic chemical vapor deposition. The indium composition is continuously tunable from 3.4 to 2.5 eV, with the latter being significant for a four-junction photovoltaic device. Growth mechanism, morphological evolution, and optical as well as structural properties were analyzed. Photovoltaic response was also shown.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; solar cells; wide band gap semiconductors; InGaN; MOCVD-grown nanowires; four-junction photovoltaic device; growth mechanism; metal-organic chemical vapor deposition; morphological evolution; photovoltaic response; solar cells; strain-relaxed nanowires; structural properties; vertically-aligned nanowires; Gallium nitride; Nanowires; Photonic band gap; Photovoltaic systems; Substrates; indium gallium nitride; multijunction photovoltaic cells; thin-film solar cells;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925097
