Title :
Effect of test method on the failure dose of SEEQ 28C256 EEPROM
Author :
Verkasalo, Raimo
Author_Institution :
VTT Electron., Oulu, Finland
Abstract :
Two lots of SEEQ 28C256 EEPROM were tested for total dose tolerance. Differences between them were found to result in a dependence of the relative superiority and failure doses of the two lots on the test method and the failure criterion. The failure doses were between 6 and 15 krad, and the failure mechanisms were an increase in the standby current and a loss of programmability.<>
Keywords :
CMOS memory circuits; EPROM; failure analysis; integrated circuit reliability; integrated circuit testing; radiation effects; radiation hardening (electronics); 6 to 15 krad; CMOS memory chip; SEEQ 28C256 EEPROM; failure criterion; failure dose; failure mechanisms; programmability loss; standby current increase; test method; total dose tolerance; Annealing; Degradation; EPROM; Electronic equipment testing; Failure analysis; Hospitals; MOS devices; Manufacturing; Qualifications; Radiation hardening;
Journal_Title :
Nuclear Science, IEEE Transactions on
