Title :
Space radiation evaluation of 16 Mbit DRAMs for mass memory applications
Author :
Calvel, Philippe ; Lamothe, Pierre ; Barillot, Catherine ; Ecoffet, Robert ; Duzellier, Sophie ; Stassinopoulos, E.G.
Author_Institution :
CATEL ESPACE, Toulouse, France
Abstract :
This paper presents heavy ions, protons and total dose data results for 16 Mbit DRAMs from IBM and Texas Instruments, including a ´built-in ECC´ DRAM. Single event phenomena rate are calculated for low earth orbits.<>
Keywords :
CMOS memory circuits; DRAM chips; error correction codes; ion beam effects; proton effects; space vehicle electronics; 16 Mbit; DRAMs; IBM; Texas Instruments; built-in ECC; heavy ions; low earth orbits; mass memory applications; proton dose data; single event phenomena; space radiation evaluation; total dose data; CMOS technology; Error correction codes; Instruments; Low earth orbit satellites; Orbital calculations; Power supplies; Protons; Random access memory; Space technology; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
