Improvement of radiation hardness in fully-depleted SOI n-MOSFETs using Ge-implantation

Author

Wei, Hua-Fang ; Chung, James E. ; Kalkhoran, Nader M. ; Namavar, Fereydoon ; Annamalai, N.K. ; Shedd, Walter M.

Volume

41

Issue

6

fYear

1994

Firstpage

2291

Lastpage

2296

Abstract

This work demonstrates a well-controlled technique of channel defect engineering by implanting germanium into the channel of a silicon-on-insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to reduce parasitic bipolar effects. The Ge-implant also serves the dual purpose of positioning most of the subgap states in the back interface region which retard the total dose responses of off-state leakage and front-channel threshold voltage.<>

Keywords

MOSFET; SIMOX; carrier lifetime; energy states; ion implantation; minority carriers; radiation effects; semiconductor technology; silicon-on-insulator; Ge-implant; Ge-implantation; SOI; Si-SiO/sub 2/; back interface region; channel defect engineering; front-channel threshold voltage; fully-depleted; minority-carrier lifetime killers; n-MOSFETs; off-state leakage; parasitic bipolar effects; radiation hardness; silicon-on-insulator; subgap energy states; subgap states; total dose responses; well-controlled technique; Annealing; Fabrication; Implants; Insulation; Laboratories; MOSFET circuits; Oxidation; Power engineering and energy; Silicon on insulator technology; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340578

Filename

340578