Title :
Radiation response of fully-depleted MOS transistors fabricated in SIMOX
Author :
Jenkins, W.C. ; Liu, S.T.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The total dose radiation response of radiation-resistant fully-depleted submicron n-MOS and p-MOS transistors fabricated in SIMOX is presented. The total ionizing dose radiation induced threshold voltage shifts under three different irradiation bias conditions, including the worst case (pass-gate) bias for n-MOS transistors are discussed. Total dose hard fully-depleted p-MOS transistors are experimentally demonstrated. The larger threshold voltage shifts of fully-depleted n-MOS transistors as compared to partially-depleted n-MOS transistors in an ionizing radiation environment are explained by a model coupling the radiation induced buried oxide charge to the top transistor.<>
Keywords :
MOSFET; SIMOX; ion beam effects; radiation effects; SIMOX; Si; charge coupling; fully-depleted MOS transistors; fully-depleted submicron n-MOS; ionizing radiation environment; irradiation bias conditions; n-MOS transistors; p-MOS transistors; partially-depleted n-MOS transistors; pass-gate; radiation induced buried oxide charge; radiation induced threshold voltage shifts; radiation response; radiation-resistant; threshold voltage shifts; top transistor; total dose radiation response; total ionizing dose radiation; Degradation; Fabrication; Inverters; Ionizing radiation; Laboratories; MOSFET circuits; Oxygen; Silicon; Solid state circuits; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
