DocumentCode :
1216127
Title :
On the Decomposition of Silane in Plasma Deposition Reactors
Author :
DeJoseph, C.A., Jr. ; Haaland, P.d. ; Garscadden, A.
Volume :
14
Issue :
2
fYear :
1986
fDate :
4/1/1986 12:00:00 AM
Firstpage :
165
Lastpage :
172
Abstract :
In a low-pressure discharge, plasma-enhanced decomposition of silane proceeds by various channels including electron-impact, ion- and radical-induced, and heterogeneous reactions. The results of several experiments are presented to clarify the relative importance of the processes. The conclusions of these studies and associated analysis are that the dominant processes are strongly influenced by the gas residence time, the power density input, and the electronegative characteristics of the silane discharge.
Keywords :
Atomic layer deposition; Electrons; Hydrogen; Inductors; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Radio frequency; Semiconductor films;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.1986.4316519
Filename :
4316519
Link To Document :
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