Title :
Optimization of tellurium doped InGaAs grown by MOCVD for solar cell tunnel junctions application
Author :
Byrnes, Daniel P. ; Ebert, C. ; Pulwin, Ziggy ; Krahnert, Aaron ; Ramos, Felix
Author_Institution :
Veeco Process Equip., Inc., Somerset, NJ, USA
Abstract :
InP based solar cells utilize tunnel junctions consisting of highly doped n and p type InGaAs layers. Tellurium doped bulk InGaAs was grown by MOCVD on InP substrates and optimized for highest doping level as a function of MOCVD growth conditions. In addition the material was optimized for surface morphology and crystal quality. Temperature, V-III ratio, and strain growth parameters have been explored based on constant Te flux.
Keywords :
chemical vapour deposition; doping; gallium arsenide; indium compounds; solar cells; surface morphology; tellurium; ternary semiconductors; InGaAs:Te; MOCVD; V-III ratio; crystal quality; monolithic multijunction solar cells; solar cell tunnel junctions; strain growth parameters; surface morphology; tellurium; InGaAs; MOCVD; Semiconductor Growth; Triple Junction Solar Cell;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925116
