DocumentCode
1216326
Title
Upconversion assisted decay of population inversion in Er-doped silica after delta-pulse excitation
Author
Khoptyar, Dmitry ; Sergeyev, Sergey ; Jaskorzynska, Bozena
Author_Institution
Lab. of Opt., R. Inst. of Technol., Kista, Sweden
Volume
41
Issue
2
fYear
2005
Firstpage
205
Lastpage
212
Abstract
We investigate homogeneous upconversion (HUC) assisted decay of the population inversion in Er-doped silica after delta-pulse excitations by means of Monte Carlo simulations. We derive an analytic expression for this decay when energy migration among Er is negligible and show that it is essentially an extension of the Förster-type donor-acceptor quenching decay for the case when donor and acceptor ions are the same species. We compare HUC during the decay to HUC while pumping CW and show that they considerably differ at the low and moderate Er concentrations. Based on Monte Carlo (MC) simulations, we construct a heuristic approximation to the HUC assisted decay, which makes our MC results readily available for the future experimental and theoretical studies and provides simple means for determination of HUC parameters by fitting to experimental data.
Keywords
Monte Carlo methods; erbium; optical materials; photoexcitation; population inversion; radiation quenching; silicon compounds; Er-doped silica; Foster-type donor-acceptor quenching decay; Monte Carlo simulations; delta-pulse excitation; homogeneous upconversion assisted decay; population inversion; Energy exchange; Erbium; Glass; Laboratories; Microscopy; Monte Carlo methods; Optical pumping; Probability; Silicon compounds; Steady-state;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2004.839684
Filename
1386477
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