DocumentCode
1216335
Title
A new procedure for static RAM evaluation under X-ray pulses
Author
Marec, Ronan ; Mary, Patrick ; Ferrant, Richard ; Fairbank, Xavier ; Gaillard, Rémi ; Palau, Jean-Marie ; Gasiot, J.
Author_Institution
Nucletudes S.A., Les Ulis, France
Volume
41
Issue
6
fYear
1994
Firstpage
2467
Lastpage
2473
Abstract
An original method, to identify the initial patterns that are the most favourable to obtain upsets under X-ray pulses, has been developed on static RAMs in the standby mode. The results obtained with these initial patterns are interesting in order to analyse the radiation induced failures.<>
Keywords
CMOS memory circuits; SRAM chips; X-ray effects; failure analysis; integrated circuit reliability; integrated circuit testing; silicon-on-insulator; SRAM evaluation; X-ray pulses; radiation induced failures; standby mode; static RAM; upset mechanism; written patterns; Circuits; Ionizing radiation; Logic testing; Photoconductivity; Power supplies; Pulsed power supplies; Random access memory; Read-write memory; Silicon on insulator technology; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.340603
Filename
340603
Link To Document