DocumentCode
1216379
Title
A model for the bipolar-like response of GaAs MESFETs to a high dose rate environment
Author
Islam, N.E. ; Howard, J.W. ; Fageeha, O. ; Block, R.C. ; Becker, M.
Author_Institution
Dept. of Nucl. Eng. & Eng. Phys., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
41
Issue
6
fYear
1994
Firstpage
2494
Lastpage
2501
Abstract
A model for bipolar mechanism, initiated in some MESFETs during a radiation transient, is presented. It differs from other models in its postulation that the ´neutral base´ is formed during the transient and is not present during normal device operation. The response mechanism is due to the geometry of the device and does not depend on its material properties.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; radiation effects; semiconductor device models; GaAs; MESFETs; bipolar mechanism; bipolar-like response; device geometry; high dose rate environment; model; neutral base formation; radiation transient; Bipolar transistors; Circuits; Electrons; Gallium arsenide; Geometry; Linear particle accelerator; MESFETs; Material properties; Optical pulses; Physics;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.340607
Filename
340607
Link To Document