Study of punch-through characteristics in irradiated MOSFETs

Author

Paccagnella, A. ; Bisello, D. ; Rold, M. Da ; Gotra, Yu ; Benetti, P.

Author_Institution

Istituto Nazionale di Fisica Nucl., Padova, Italy

Volume

41

Issue

6

fYear

1994

Firstpage

2511

Lastpage

2520

Abstract

The DC and low frequency AC characteristics of the punch-through (PT) conduction have been examined in MOSFETs with different channel width/length ratios, fabricated on high resistivity Si substrates. The experimental results can be fitted by an analytical model deriving from a previous one developed for BARRITT devices. The modifications on the PT conduction induced by high dose neutron irradiation have been studied at various temperatures. The effects due to the radiation induced deep levels cannot be easily taken into account into the DC model, but can still be interpreted by using the AC model of the device.<>

Keywords

MOSFET; deep levels; neutron effects; semiconductor device models; AC model; DC characteristics; DC model; Si; analytical model; channel width/length ratios; high dose neutron irradiation; high resistivity Si substrates; irradiated MOSFETs; low frequency AC characteristics; punch-through characteristics; radiation induced deep levels; Analytical models; Conductivity; Detectors; Frequency; MOSFETs; Microstrip; Neutrons; Performance evaluation; Silicon; Substrates;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340609

Filename

340609