Title :
Study of punch-through characteristics in irradiated MOSFETs
Author :
Paccagnella, A. ; Bisello, D. ; Rold, M. Da ; Gotra, Yu ; Benetti, P.
Author_Institution :
Istituto Nazionale di Fisica Nucl., Padova, Italy
Abstract :
The DC and low frequency AC characteristics of the punch-through (PT) conduction have been examined in MOSFETs with different channel width/length ratios, fabricated on high resistivity Si substrates. The experimental results can be fitted by an analytical model deriving from a previous one developed for BARRITT devices. The modifications on the PT conduction induced by high dose neutron irradiation have been studied at various temperatures. The effects due to the radiation induced deep levels cannot be easily taken into account into the DC model, but can still be interpreted by using the AC model of the device.<>
Keywords :
MOSFET; deep levels; neutron effects; semiconductor device models; AC model; DC characteristics; DC model; Si; analytical model; channel width/length ratios; high dose neutron irradiation; high resistivity Si substrates; irradiated MOSFETs; low frequency AC characteristics; punch-through characteristics; radiation induced deep levels; Analytical models; Conductivity; Detectors; Frequency; MOSFETs; Microstrip; Neutrons; Performance evaluation; Silicon; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
