Title :
Radiation effects R&D in the 1970s: a retrospective view
Author_Institution :
Northrop Grumman Crp., Hawthorne, CA, USA
Abstract :
This paper provides a retrospective view of radiation effects research and development in the 1970s, with emphasis placed on advances made in four areas: single event effects; MOS devices; charge-coupled devices; and displacement damage. Lessons learned and future opportunities are considered.<>
Keywords :
MIS devices; charge-coupled devices; monolithic integrated circuits; radiation effects; research initiatives; reviews; semiconductor devices; MOS devices; R&D; charge-coupled devices; displacement damage; radiation effects; research and development; single event effects; Degradation; Insulation; Ionizing radiation; Large scale integration; MOS devices; Radiation effects; Radiation hardening; Radiative recombination; Research and development; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
