Emitter-Size Effects and Ultimate Scalability of InP:GaInP/GaAsSb/InP DHBTs

Author

Liu, H.G. ; Ostinelli, O. ; Zeng, Y.P. ; Bolognesi, C.R.

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol. Zurich, Zurich

Volume

29

Issue

6

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

546

Lastpage

548

Abstract

Emitter-size effects (ESEs) are experimentally investigated in GaAsSb-based double heterojunction bipolar transistors (DHBTs) with a new InP:GaInP composite emitter. This letter reveals that both the extrinsic base surface recombination and the intrinsic space charge recombination directly under the emitter are effectively suppressed over a wide range of collector current densities by eliminating the type-II conduction band at the emitter-base heterojunction. The reduction of ESEs enables aggressive scaling and suggests that the GaInP/GaAsSb heterojunction could become a key enabling element for sub-100-nm terahertz bandwidth InP/GaAsSb DHBTs.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; DHBT; InP:GaInP-GaAsSb-InP; aggressive scaling; collector current densities; composite emitter; double heterojunction bipolar transistors; emitter-base heterojunction; emitter-size effects; extrinsic base surface recombination; intrinsic space charge recombination; type-II conduction band; Current gain; GaAsSb; GaInP; InP; double heterojunction bipolar transistor (DHBT); emitter-size effects (ESEs); type-II;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.920850

Filename

4518948