• DocumentCode
    1217114
  • Title

    A 50 dB variable gain amplifier using parasitic bipolar transistors in CMOS

  • Author

    Pan, Tzu-wang ; Abidi, Asad A.

  • Author_Institution
    Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
  • Volume
    24
  • Issue
    4
  • fYear
    1989
  • fDate
    8/1/1989 12:00:00 AM
  • Firstpage
    951
  • Lastpage
    961
  • Abstract
    A variable-gain amplifier (VGA) with a gain range of 50 dB has been implemented in a standard 3 μm CMOS process using parasitic lateral and vertical bipolar transistors to form the core of the circuit. The bipolar transistors had been characterized extensively. The VGA has a bandwidth larger than 3 MHz over the whole gain range and operates on a single 5 V power supply. The active area is about 0.8×0.9 mm2
  • Keywords
    CMOS integrated circuits; amplifiers; linear integrated circuits; 3 micron; CMOS; active area; gain range; parasitic bipolar transistors; parasitic lateral bipolar transistors; variable-gain amplifier; vertical bipolar transistors; Bipolar transistors; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS process; Dynamic range; Feedback circuits; Gain; Operational amplifiers; Transconductance; Wideband;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.34077
  • Filename
    34077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1217114