Title :
A 50 dB variable gain amplifier using parasitic bipolar transistors in CMOS
Author :
Pan, Tzu-wang ; Abidi, Asad A.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
8/1/1989 12:00:00 AM
Abstract :
A variable-gain amplifier (VGA) with a gain range of 50 dB has been implemented in a standard 3 μm CMOS process using parasitic lateral and vertical bipolar transistors to form the core of the circuit. The bipolar transistors had been characterized extensively. The VGA has a bandwidth larger than 3 MHz over the whole gain range and operates on a single 5 V power supply. The active area is about 0.8×0.9 mm2
Keywords :
CMOS integrated circuits; amplifiers; linear integrated circuits; 3 micron; CMOS; active area; gain range; parasitic bipolar transistors; parasitic lateral bipolar transistors; variable-gain amplifier; vertical bipolar transistors; Bipolar transistors; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS process; Dynamic range; Feedback circuits; Gain; Operational amplifiers; Transconductance; Wideband;
Journal_Title :
Solid-State Circuits, IEEE Journal of
