Numerical analysis and optimum design of efficient μc-Si/μc-Si1−xGex thin-film solar cells

Author

Ehsan, M. Amimul ; Siddiki, Mahbube Khoda ; Yang Yi

Author_Institution

Dept. of Comput. Sci. & Electr. Eng., Univ. of Missouri-Kansas City, Kansas City, MO, USA

fYear

2014

fDate

8-13 June 2014

Firstpage

1321

Lastpage

1325

Abstract

This study deals with the numerical simulation and analysis of electrical transport properties of μc-Si/μc-Si_1-xGe_x thin-film solar cells. Layer by layer optimization of this solar cell structure was done by using advanced bandgap engineering for its structural and electrical characterization. Study was performed by varying the thickness of intrinsic μc-Si and doping concentration of μc-Si_1-xGe_x layer. It was found that μc-Si absorber and μc-Si_1-xGe_x strained layers play a critical role to improve the light absorption properties of the solar cell structure. Obtained result shows a significant enhancement in conversion efficiency of the proposed μc-Si/μc-Si_1-xGe_x thin-film solar cells.

Keywords

doping; germanium compounds; numerical analysis; semiconductor thin films; silicon compounds; solar cells; Si-SiGe; advanced bandgap engineering; conversion efficiency; doping concentration; electrical characterization; electrical transport properties; layer by layer optimization; light absorption properties; numerical analysis; solar cell structure; structural characterization; thin-film solar cells; Current density; DH-HEMTs; Doping; Metals; Optimization; absorber layer; dangling bond; doping concentration; intrinsic layer; numerical simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925161

Filename

6925161