Gigahertz-band high-gain GaAs monolithic amplifiers using parallel feedback technique

Author

Ishihara, Noboru ; Kikuchi, Hiroyuki ; Ohara, Mamoru

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

24

Issue

4

fYear

1989

fDate

8/1/1989 12:00:00 AM

Firstpage

962

Lastpage

968

Abstract

A high-grain multistage amplifier design technique is described. As countermeasures against FET drawbacks, the drain conductance dispersion was modeled and the DC parallel feedback was applied against process variations. Based on these and further feedback techniques, a limiting amplifier and a gain-controllable amplifier for satellite communication systems were designed and fabricated utilizing an 0.8 μm gate-length ion-implanted GaAs MESFET process. Moreover, their packages were developed considering stability conditions. A 45 dB 0.1-3.5 GHz limiting amplifier and a 22-38 dB 0.1-2.5 GHz gain-controllable amplifier were developed

Keywords

III-V semiconductors; MMIC; feedback; field effect integrated circuits; gallium arsenide; microwave amplifiers; satellite relay systems; 0.1 to 2.5 GHz; 0.1 to 3.5 GHz; 0.8 micron; 22 to 38 dB; 45 dB; GaAs; MESFET process; drain conductance dispersion; feedback techniques; gain-controllable amplifier; high-grain multistage amplifier; limiting amplifier; parallel feedback technique; satellite communication systems; stability conditions; Broadband amplifiers; Circuits; FETs; Feedback; Frequency; Gallium arsenide; MESFETs; Packaging; Satellites; Transconductance;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.34078

Filename

34078