Title :
Gigahertz-band high-gain GaAs monolithic amplifiers using parallel feedback technique
Author :
Ishihara, Noboru ; Kikuchi, Hiroyuki ; Ohara, Mamoru
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
8/1/1989 12:00:00 AM
Abstract :
A high-grain multistage amplifier design technique is described. As countermeasures against FET drawbacks, the drain conductance dispersion was modeled and the DC parallel feedback was applied against process variations. Based on these and further feedback techniques, a limiting amplifier and a gain-controllable amplifier for satellite communication systems were designed and fabricated utilizing an 0.8 μm gate-length ion-implanted GaAs MESFET process. Moreover, their packages were developed considering stability conditions. A 45 dB 0.1-3.5 GHz limiting amplifier and a 22-38 dB 0.1-2.5 GHz gain-controllable amplifier were developed
Keywords :
III-V semiconductors; MMIC; feedback; field effect integrated circuits; gallium arsenide; microwave amplifiers; satellite relay systems; 0.1 to 2.5 GHz; 0.1 to 3.5 GHz; 0.8 micron; 22 to 38 dB; 45 dB; GaAs; MESFET process; drain conductance dispersion; feedback techniques; gain-controllable amplifier; high-grain multistage amplifier; limiting amplifier; parallel feedback technique; satellite communication systems; stability conditions; Broadband amplifiers; Circuits; FETs; Feedback; Frequency; Gallium arsenide; MESFETs; Packaging; Satellites; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
