• DocumentCode
    121746
  • Title

    Study of ion irradiated dielectric layer using network theory

  • Author

    Sharma, Mukesh ; Sharma, Ashok

  • Author_Institution
    Dept. of Mater. & Metall. Eng., PEC Univ. of Technol., Chandigarh, India
  • fYear
    2014
  • fDate
    7-8 Feb. 2014
  • Firstpage
    384
  • Lastpage
    387
  • Abstract
    The rapidly developing theory of complex networks indicates that real networks are not random. They have a large-scale architecture, governed by strict organizing principles. Recently, network theory has be en applied on ion track-based electronic structures such as the (TEMPOS (Tunable Electronic Materials with Pores in Oxide on Silicon) structures. In this work, the network theory has be en applied to study the surface properties of TEMPOS structures. The surface properties, i.e., number of pores and their distribution (which ultimately decide the behaviour of the TEMPOS structures) in the dielectric layer on a Si substrate, comes out to be scale-free and governed by the Power-law (power ~ 2).
  • Keywords
    MIS structures; complex networks; dielectric materials; elemental semiconductors; ion beam effects; porous materials; silicon; surface structure; Si; Si substrate; TEMPOS structures; ion irradiated dielectric layer; ion track-based electronic structures; network theory; number of pores; pores distribution; power law; surface properties; tunable electronic materials with pores in oxide on silicon structures; Computers; Power grids; Robustness; Standards; Ion track electronics; Network Theory; TEMPOS structures;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Issues and Challenges in Intelligent Computing Techniques (ICICT), 2014 International Conference on
  • Conference_Location
    Ghaziabad
  • Type

    conf

  • DOI
    10.1109/ICICICT.2014.6781313
  • Filename
    6781313