DocumentCode
121746
Title
Study of ion irradiated dielectric layer using network theory
Author
Sharma, Mukesh ; Sharma, Ashok
Author_Institution
Dept. of Mater. & Metall. Eng., PEC Univ. of Technol., Chandigarh, India
fYear
2014
fDate
7-8 Feb. 2014
Firstpage
384
Lastpage
387
Abstract
The rapidly developing theory of complex networks indicates that real networks are not random. They have a large-scale architecture, governed by strict organizing principles. Recently, network theory has be en applied on ion track-based electronic structures such as the (TEMPOS (Tunable Electronic Materials with Pores in Oxide on Silicon) structures. In this work, the network theory has be en applied to study the surface properties of TEMPOS structures. The surface properties, i.e., number of pores and their distribution (which ultimately decide the behaviour of the TEMPOS structures) in the dielectric layer on a Si substrate, comes out to be scale-free and governed by the Power-law (power ~ 2).
Keywords
MIS structures; complex networks; dielectric materials; elemental semiconductors; ion beam effects; porous materials; silicon; surface structure; Si; Si substrate; TEMPOS structures; ion irradiated dielectric layer; ion track-based electronic structures; network theory; number of pores; pores distribution; power law; surface properties; tunable electronic materials with pores in oxide on silicon structures; Computers; Power grids; Robustness; Standards; Ion track electronics; Network Theory; TEMPOS structures;
fLanguage
English
Publisher
ieee
Conference_Titel
Issues and Challenges in Intelligent Computing Techniques (ICICT), 2014 International Conference on
Conference_Location
Ghaziabad
Type
conf
DOI
10.1109/ICICICT.2014.6781313
Filename
6781313
Link To Document