DocumentCode :
121750
Title :
Relative efficiency revealed: Equations for k1–k6 of the PVGIS model
Author :
Yordanov, Georgi Hristov
Author_Institution :
Univ. of Agder (UiA), Grimstad, Norway
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1393
Lastpage :
1398
Abstract :
The European PV Geographical Information System (PVGIS) describes module performance in terms of the relative efficiency with respect to Standard Testing Conditions (STC). The efficiency´s dependence on irradiance and operating temperature is modeled with a bi-quadratic polynomial with respect to the relative temperature and the logarithm of relative irradiance. In earlier works, the present author derived relations between two model coefficients describing the irradiance dependence at 25°C, k1 and k2, and I-V curve model parameters such as the series resistance RS and the ideality factor n. There was good agreement between the theoretical and fitted values of k1, but the fitted values of k2 were overestimated for most of the studied crystalline-silicon (c-Si) modules. The present paper derives a correction factor for k2 and equations for k3 - k6. The results are limited to the case of PV modules behaving well according to the one-exponential I-V curve model, with negligible current leakage via cell shunts. The effects of several I-V curve non-idealities on performance are discussed.
Keywords :
elemental semiconductors; geographic information systems; power engineering computing; silicon; solar cells; European PV geographical information system; I-V curve model; PV modules; PVGIS model; Si; cell shunts; crystalline-silicon modules; current leakage; irradiance dependence; leakage; one-exponential I-V curve model; series resistance; standard testing conditions; temperature 25 C; Aging; Computer architecture; Equations; Mathematical model; Meteorology; Microprocessors; Sun; I–V curve model; PV modules; PVGIS; energy rating; performance model; relative efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925178
Filename :
6925178
Link To Document :
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