Title :
1-W high linear broadband RF power amplifier with Certesian feedback for TETRA modulation [Application Notes]
Author :
Narendra, Kumar ; Anand, Lokesh ; Sangaran, Pragash ; Ain, M.F. ; Hassan, S.I.S.
Author_Institution :
Dept. of R&D, Motorola Technol., Penang
fDate :
6/1/2008 12:00:00 AM
Abstract :
Designing a high-linearity, high-efficiency RF power amplifier with wide bandwidth design is a real challenge. This article explores a technique to achieve 30 dBm output power with an adjacent channel power ratio (ACPR) of more than -65 dBc for frequency range of 800-900 MHz. A three-stage gallium arsenide heterojunction bipolar transistor (GaAs HBT) RF power amplifier with Cartesian feedback in closed-loop form is the main architecture of the design. An adaptive bias technique was used in the RF power amplifier design to achieve high linearity while preserving good efficiency.
Keywords :
adjacent channel interference; gallium arsenide; heterojunction bipolar transistors; mobile radio; power amplifiers; radiofrequency amplifiers; wideband amplifiers; Cartesian feedback; GaAs; TETRA modulation; Trans-European Trunked Radio; adaptive bias; adjacent channel power ratio; frequency 800 MHz to 900 MHz; heterojunction bipolar transistor; high linear broadband RF power amplifier; power 1 W; wide bandwidth design; Bandwidth; Broadband amplifiers; Feedback; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2008.920434
