DocumentCode
1217810
Title
An improved high-performance logic gate using series diode and resistor loads for ECL/CML applications
Author
Hwang, Bor-yuan ; Bushey, Thomas P.
Author_Institution
Motorola Inc., Mesa, AZ, USA
Volume
24
Issue
4
fYear
1989
fDate
8/1/1989 12:00:00 AM
Firstpage
1048
Lastpage
1054
Abstract
An improved high-performance logic gate comprised of a series collector-base shorted n-p-n transistor diode and resistor as the load element for emitter-coupled logic/current-mode logic (ECL/CML) applications is presented. This load element has been shown to provide up to a 50% performance improvement in ring-oscillator gate delay. A comparison between typical load elements was conducted to demonstrate the effect of the active load. The physical mechanism that accounts for the performance improvement is identified as the inductivelike impedance characteristic of the active load. Analytical results and computer simulation are given to support the mode. Measured data are in excellent agreement with the computer simulation. In addition, this load element is found to be comparable with typical ECL/CML applications
Keywords
bipolar integrated circuits; emitter-coupled logic; integrated logic circuits; logic gates; ECL/CML applications; high-performance logic gate; inductivelike impedance characteristic; resistor loads; ring-oscillator gate delay; series diode; shorted n-p-n transistor diode; Application software; Circuits; Computer simulation; Delay; Diodes; Impedance; Logic gates; Resistors; Transistors; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.34091
Filename
34091
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