DocumentCode :
1217810
Title :
An improved high-performance logic gate using series diode and resistor loads for ECL/CML applications
Author :
Hwang, Bor-yuan ; Bushey, Thomas P.
Author_Institution :
Motorola Inc., Mesa, AZ, USA
Volume :
24
Issue :
4
fYear :
1989
fDate :
8/1/1989 12:00:00 AM
Firstpage :
1048
Lastpage :
1054
Abstract :
An improved high-performance logic gate comprised of a series collector-base shorted n-p-n transistor diode and resistor as the load element for emitter-coupled logic/current-mode logic (ECL/CML) applications is presented. This load element has been shown to provide up to a 50% performance improvement in ring-oscillator gate delay. A comparison between typical load elements was conducted to demonstrate the effect of the active load. The physical mechanism that accounts for the performance improvement is identified as the inductivelike impedance characteristic of the active load. Analytical results and computer simulation are given to support the mode. Measured data are in excellent agreement with the computer simulation. In addition, this load element is found to be comparable with typical ECL/CML applications
Keywords :
bipolar integrated circuits; emitter-coupled logic; integrated logic circuits; logic gates; ECL/CML applications; high-performance logic gate; inductivelike impedance characteristic; resistor loads; ring-oscillator gate delay; series diode; shorted n-p-n transistor diode; Application software; Circuits; Computer simulation; Delay; Diodes; Impedance; Logic gates; Resistors; Transistors; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.34091
Filename :
34091
Link To Document :
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