• DocumentCode
    1217810
  • Title

    An improved high-performance logic gate using series diode and resistor loads for ECL/CML applications

  • Author

    Hwang, Bor-yuan ; Bushey, Thomas P.

  • Author_Institution
    Motorola Inc., Mesa, AZ, USA
  • Volume
    24
  • Issue
    4
  • fYear
    1989
  • fDate
    8/1/1989 12:00:00 AM
  • Firstpage
    1048
  • Lastpage
    1054
  • Abstract
    An improved high-performance logic gate comprised of a series collector-base shorted n-p-n transistor diode and resistor as the load element for emitter-coupled logic/current-mode logic (ECL/CML) applications is presented. This load element has been shown to provide up to a 50% performance improvement in ring-oscillator gate delay. A comparison between typical load elements was conducted to demonstrate the effect of the active load. The physical mechanism that accounts for the performance improvement is identified as the inductivelike impedance characteristic of the active load. Analytical results and computer simulation are given to support the mode. Measured data are in excellent agreement with the computer simulation. In addition, this load element is found to be comparable with typical ECL/CML applications
  • Keywords
    bipolar integrated circuits; emitter-coupled logic; integrated logic circuits; logic gates; ECL/CML applications; high-performance logic gate; inductivelike impedance characteristic; resistor loads; ring-oscillator gate delay; series diode; shorted n-p-n transistor diode; Application software; Circuits; Computer simulation; Delay; Diodes; Impedance; Logic gates; Resistors; Transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.34091
  • Filename
    34091