• DocumentCode
    1217878
  • Title

    A new wide-band Darlington amplifier

  • Author

    Armijo, C.T. ; Meyer, Robert G.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • Volume
    24
  • Issue
    4
  • fYear
    1989
  • fDate
    8/1/1989 12:00:00 AM
  • Firstpage
    1105
  • Lastpage
    1109
  • Abstract
    A wideband Darlington amplifier topology which is well suited for maximum-bandwidth, moderate-gain, matched-impedance applications is described. A test circuit using a silicon bipolar monolithic technology with an fT of 9 GHz has been fabricated. Measured results show a 9.3 dB insertion gain and a 3.2 GHz bandwidth for the packaged device
  • Keywords
    bipolar integrated circuits; impedance matching; wideband amplifiers; 3.2 GHz; 9.3 dB; Si; amplifier topology; bipolar monolithic technology; matched-impedance applications; wide-band Darlington amplifier; Bandwidth; Broadband amplifiers; Circuit testing; Circuit topology; Frequency; Impedance; Laboratories; Military computing; Pulse amplifiers; Resistors;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.34098
  • Filename
    34098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1217878