A magnetic power and communication interface for a CMOS integrated circuit

Author

Glasser, Lance A. ; Malamy, Adam C. ; Selvidge, Charles W.

Volume

24

Issue

4

fYear

1989

fDate

8/1/1989 12:00:00 AM

Firstpage

1146

Lastpage

1149

Abstract

Bulk CMOS integrated circuits which receive power and perform all I/O functions exclusively by means of inductive coupling are discussed. Both layers of metal in a conventional two-level-metal 3μm p-well technology were used to construct on-chip planar coils for sensing and perturbing externally generated magnetic fields in the 100 kHz to 10 MHz regime. The optimal design uses few, rather than many, coil turns operated at high frequency. The power delivered to one test chip was 0.9 mW at 3 V, while a second test chip demonstrated inductive low-power bidirectional communication

Keywords

CMOS integrated circuits; electric sensing devices; integrated circuit technology; magnetic field measurement; 100 kHz to 10 MHz; 3 micron; CMOS integrated circuit; I/O functions; bulk CMOS; communication interface; externally generated magnetic fields; inductive coupling; inductive low-power bidirectional communication; on-chip planar coils; p-well technology; CMOS integrated circuits; CMOS technology; Coils; Coupling circuits; Frequency; Integrated circuit technology; Magnetostatic waves; Millimeter wave technology; Testing; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.34104

Filename

34104