DocumentCode :
1217964
Title :
Cell and circuit design for single-poly EPROM
Author :
Hoe, David H K ; Schultz, Kenneth J. ; Salama, C. Andre T ; Hadaway, Robert A. ; Kempf, Paul
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Volume :
24
Issue :
4
fYear :
1989
fDate :
8/1/1989 12:00:00 AM
Firstpage :
1153
Lastpage :
1157
Abstract :
The design and characterization of single-poly erasable programmable read-only memory (EPROM) cells in a standard CMOS p-well technology are discussed. Process-compatible high-voltage drivers for programming the cells are presented. A memory array is implemented to illustrate the integration of the cells with standard logic circuitry
Keywords :
CMOS integrated circuits; EPROM; integrated memory circuits; CMOS p-well technology; high-voltage drivers; memory array; programming; single-poly EPROM; standard logic circuitry; CMOS logic circuits; CMOS technology; Circuit synthesis; Driver circuits; EPROM; Logic arrays; Logic circuits; Logic programming; PROM; Programmable logic arrays;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.34106
Filename :
34106
Link To Document :
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