DocumentCode :
1217996
Title :
Emerging Nanoscale Memory and Logic Devices: A Critical Assessment
Author :
Hutchby, James A. ; Cavin, Ralph ; Zhirnov, Victor ; Brewer, Joe E. ; Bourianoff, George
Volume :
41
Issue :
5
fYear :
2008
fDate :
5/1/2008 12:00:00 AM
Firstpage :
28
Lastpage :
32
Abstract :
This article presents the ERD Working Group´s collective judgment with respect to the long-term potential of nanoscale memory and logic devices to replace silicon-based CMOS logic or baseline memory technology. It does not judge their potential to supplement or complement CMOS. The intent is thus prescriptive, not prescriptive: to provide a technically grounded, objective benchmark for emerging research memory and logic devices.
Keywords :
CMOS logic circuits; CMOS memory circuits; nanoelectronics; CMOS logic device technology; CMOS memory device technology; ERD Working Group; ITRS working group; nanodevices; CMOS logic circuits; CMOS technology; FETs; Integrated circuit technology; Logic devices; MOSFET circuits; Nanoscale devices; Power dissipation; Silicon; Switches; CMOS; ITRS; MOSFET; logic; memory; nanotechnology;
fLanguage :
English
Journal_Title :
Computer
Publisher :
ieee
ISSN :
0018-9162
Type :
jour
DOI :
10.1109/MC.2008.154
Filename :
4519932
Link To Document :
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