• DocumentCode
    1218295
  • Title

    Excellent Switching Uniformity of Cu-Doped \\hbox {MoO}_{x}/\\hbox {GdO}_{x} Bilayer for Nonvolatile Memory Applications

  • Author

    Yoon, Jaesik ; Choi, Hyejung ; Lee, Dongsoo ; Park, Ju-Bong ; Lee, Joonmyoung ; Seong, Dong-jun ; Ju, Yongkyu ; Chang, Man ; Jung, Seungjae ; Hwang, Hyunsang

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju
  • Volume
    30
  • Issue
    5
  • fYear
    2009
  • fDate
    5/1/2009 12:00:00 AM
  • Firstpage
    457
  • Lastpage
    459
  • Abstract
    We have investigated a Cu-doped MoOx/GdOx bilayer film for nonvolatile memory applications. By adopting an ultrathin GdOx layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 104 cycles, and ten years of data retention at 85degC. By adopting bilayer films of Cu-doped MoOx/GdOx, a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdOx layer.
  • Keywords
    gadolinium compounds; molybdenum compounds; random-access storage; MoOx-GdOx:Cu; bilayer films; nanoscale local filament; nonvolatile memory applications; temperature 85 degC; $hbox{GdO}_{x}$; bilayer; nonvolatile memory (NVM); resistance random access memory (ReRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2015687
  • Filename
    4808199
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1218295